| DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC UT16NN04 is a N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with low
Rdson characteristic by high cell density trench technology.
FEATURES
* RDS(ON) ≤ 26 mΩ @ VGS = 10V, ID = 8.0A
RDS(ON) ≤ 35 mΩ @ VGS = 4.5V, ID = 5.0A
* Fast Switching Speed
* Simple Drive Requirement |