DESCRIPTION

The UTC UT1NN02 is N-channel enhancement mode power

MOSFET using UTC’s advanced technology to provide the

customers with perfect RDS(ON) and low gate charge. This device

can be operated with 4.5V low gate voltage.

FEATURES

* RDS(ON) ≤ 300 mΩ @ VGS = 4.5V, ID = 600mA

RDS(ON) ≤ 450 mΩ @ VGS = 2.5V, ID = 200mA

RDS(ON) ≤ 600 mΩ @ VGS = 1.8V, ID = 100mA

RDS(ON) ≤ 850 mΩ @ VGS = 1.5V, ID = 50mA

* Green & Pb Free