| N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG06R020MA is a N-channel Power
MOSFET, it uses UTC’s advanced technology to provide the
customers with high switching speed and low gate charge,
etc.
The UTC USG06R020MA applies to primary side switch,
synchronous rectifier, Motor Drives, etc.
FEATURES
* RDS(ON) ≤ 2.0 mΩ @ VGS=10V, ID=50A
RDS(ON) ≤ 3.0 mΩ @ VGS=4.5V, ID=50A
* High Cell Density Trench Technology
* High Power and Current Handling Capability
* Green Product |