| N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG06R026M is a N-channel Power MOSFET,
it uses UTC’s advanced technology to provide the customers
with high switching speed and low gate charge, etc.
The UTC USG06R026M applies to primary side switch,
synchronous rectifier, Motor Drives, etc.
FEATURES
* RDS(ON) ≤ 2.6 mΩ @ VGS = 10V, ID = 50A
RDS(ON) ≤ 3.8 mΩ @ VGS = 4.5V, ID = 50A
* High Cell Density Trench Technology
* High Power and Current Handling Capability
* Green Product |