DESCRIPTION

The UTC USS5112PAP is an NPN and PNP low VCE(SAT)

transistor in a leadless medium power DFN2020-6C

Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: USS4112PANP

NPN/NPN complement: USS4112PAN

FEATURES

* Very low collector-emitter saturation voltage VCE(SAT)

* High collector current capability IC and ICM

* High collector current gain hFE at high IC

* Reduced Printed-Circuit Board (PCB) requirements

* High energy efficiency due to less heat generation

* Green & Pb Free