| N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG15R130HC is a N-channel Power MOSFET,
it uses UTC’s advanced technology to provide the customers
with low RDS(ON) characteristic by high cell density trench
technology.
FEATURES
* RDS(ON) ≤ 13 mΩ @ VGS = 10V, ID = 45A
* Extremely low on-resistance RDS(ON)
* Excellent Low Ciss
* Green Product |