| N-CHANNEL SGT ENHANCEMENT POWER MOSFET
DESCRIPTION
The UTC USG03R016ME is a N-channel Power
MOSFET, it uses UTC’s advanced technology to provide the
customers with high switching speed and low gate charge,
etc.
The UTC USG03R016ME applies to primary side switch,
synchronous rectifier, Motor Drives, etc.
FEATURES
* RDS(ON) ≤ 1.6 mΩ @ VGS = 10V, ID = 20A
RDS(ON) ≤ 3.3 mΩ @ VGS = 4.5V, ID = 20A
* High Cell Density Trench Technology
* High Power and Current Handling Capability
* Green Product |